Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics
Phys. Rev. Applied 24, 054037 Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of […]
Gate Teleportation vs Circuit Cutting in Distributed Quantum Computing
arXiv:2510.08894 Distributing circuits across quantum processor modules will enable the execution of circuits larger than the qubit count limitations of monolithic processors. While distributed quantum computation has primarily utilized circuit cutting, it incurs an exponential growth of sub-circuit sampling and classical post-processing overhead with an increasing number of cuts. The entanglement-based gate teleportation approach does […]
Monolithically Integrated C-Band Quantum Emitters on Foundry Silicon Photonics
Nano Letters, 2025 Solid-state spin-based quantum systems have emerged as popular platforms for quantum networking applications due to their optical interfaces, their long-lived quantum memories, and their natural compatibility with semiconductor manufacturing. Photonic crystal cavities are often used to enhance radiative emission; however, fabrication of the necessary subwavelength cavities is typically limited to small batch […]
Optical and microstructural studies of erbium-doped TiO2 thin films on silicon, SrTiO3, and sapphire.
J. Appl. Phys. 136, 124402 (2024) Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped is an attractive candidate: the optical transition is compatible with C-band optical fiber communications, while is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped thin […]
Isolation of individual Er quantum emitters in anatase TiO2 on Si photonics.
Appl. Phys. Lett. 125, 084001 (2024) Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er3+) is of interest because it couples C-band telecom optical transitions […]
A perspective on the pathway to a scalable quantum internet using rare-earth ions.
Appl. Phys. Rev. 10, 031307 (2023) The ultimate realization of a global quantum internet will require advances in scalable technologies capable of generating, storing, and manipulating quantum information. The essential devices that will perform these tasks in a quantum network are quantum repeaters, which will enable the long-range distribution of entanglement between distant network nodes. In […]