Optical and microstructural studies of erbium-doped TiO2 thin films on silicon, SrTiO3, and sapphire.
J. Appl. Phys. 136, 124402 (2024) Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped is an attractive candidate: the optical transition is compatible with C-band optical fiber communications, while is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped thin […]